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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,172
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A 6WCSP | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 1.2W (Ta) | P-Channel | - | 20V | 5A (Ta) | 31 mOhm @ 3A, 8.5V | 1.2V @ 1mA, 3V | 9.8nC @ 4.5V | 870pF @ 10V | 2.5V, 8.5V | ±12V | |||
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VIEW |
3,770
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A 6WCSP | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 1.2W (Ta) | P-Channel | - | 20V | 5A (Ta) | 31 mOhm @ 3A, 8.5V | 1.2V @ 1mA, 3V | 9.8nC @ 4.5V | 870pF @ 10V | 2.5V, 8.5V | ±12V | |||
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VIEW |
3,460
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A 6WCSP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 1.2W (Ta) | P-Channel | - | 20V | 5A (Ta) | 31 mOhm @ 3A, 8.5V | 1.2V @ 1mA, 3V | 9.8nC @ 4.5V | 870pF @ 10V | 2.5V, 8.5V | ±12V | |||
