Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCPF400N80ZL1
RFQ
VIEW
RFQ
2,527
In-stock
ON Semiconductor MOSFET N-CH 800V 11A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 35.7W (Tc) N-Channel - 800V 11A (Tc) 400 mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56nC @ 10V 2350pF @ 100V 10V ±20V
FCPF400N80Z
RFQ
VIEW
RFQ
896
In-stock
ON Semiconductor MOSFET N-CH 800V 11A ZNR SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 35.7W (Tc) N-Channel - 800V 11A (Tc) 400 mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56nC @ 10V 2350pF @ 100V 10V ±20V
FCP400N80Z
RFQ
VIEW
RFQ
1,871
In-stock
ON Semiconductor MOSFET N-CH 800V 14A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 195W (Tc) N-Channel - 800V 14A (Tc) 400 mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56nC @ 10V 2350pF @ 1000V 10V ±20V