Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH150N17T
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1,745
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IXYS MOSFET N-CH 175V 150A TO-247 TrenchHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel 175V 150A (Tc) 12 mOhm @ 75A, 10V 5V @ 3mA 155nC @ 10V 9800pF @ 25V 10V -
IXFK360N10T
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RFQ
1,763
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IXYS MOSFET N-CH 100V 360A TO-264 GigaMOS™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1250W (Tc) N-Channel 100V 360A (Tc) 2.9 mOhm @ 100A, 10V 5V @ 3mA 525nC @ 10V 33000pF @ 25V 10V ±20V
IXFX360N10T
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RFQ
3,505
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IXYS MOSFET N-CH 100V 360A PLUS247 GigaMOS™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel 100V 360A (Tc) 2.9 mOhm @ 100A, 10V 5V @ 3mA 525nC @ 10V 33000pF @ 25V 10V ±20V
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RFQ
2,744
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ON Semiconductor SUPERFET3 650V TO247 PKG - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 240W (Tc) N-Channel 650V 30A (Tc) 110 mOhm @ 15A, 10V 5V @ 3mA 58nC @ 10V 2560pF @ 400V 10V ±30V