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- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,873
In-stock
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Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 178W (Tc) | N-Channel | - | 600V | 38A (Tc) | 55 mOhm @ 18A, 10V | 4.5V @ 900µA | 79nC @ 10V | 3194pF @ 400V | 10V | ±20V | |||
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VIEW |
1,174
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 195W (Tc) | N-Channel | - | 650V | 21.3A (Tc) | 165 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
3,676
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO247 | Automotive, AEC-Q101, CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
3,040
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
2,140
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
1,538
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
3,399
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
2,087
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
1,007
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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|
VIEW |
782
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Automotive, AEC-Q101, CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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|
VIEW |
2,122
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
