- Series :
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- Operating Temperature :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,186
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO247-4 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4 | 171W (Tc) | N-Channel | - | 650V | 33A (Tc) | 65 mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | 10V | ±20V | |||
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VIEW |
3,629
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 171W (Tc) | N-Channel | - | 650V | 33A (Tc) | 65 mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | 10V | ±20V | |||
|
VIEW |
2,664
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 34W (Tc) | N-Channel | - | 650V | 15A (Tc) | 65 mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | 10V | ±20V | |||
|
VIEW |
2,844
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 169W (Tc) | N-Channel | - | 650V | 28A (Tc) | 70 mOhm @ 8.5A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 100V | 10V | ±20V | |||
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VIEW |
3,934
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 169W (Tc) | N-Channel | - | 650V | 28A (Tc) | 70 mOhm @ 8.5A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 100V | 10V | ±20V | |||
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|
VIEW |
876
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 169W (Tc) | N-Channel | - | 650V | 28A (Tc) | 70 mOhm @ 8.5A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,095
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-247-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 171W (Tc) | N-Channel | - | 650V | 33A (Tc) | 65 mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | 10V | ±20V | |||
|
VIEW |
2,174
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 800V 17A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 800V | 17A (Ta) | 290 mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | 2050pF @ 300V | 10V | ±20V | |||
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VIEW |
2,168
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 17A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 17A (Ta) | 290 mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | 2050pF @ 300V | 10V | ±20V | |||
