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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,702
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Thin-Pak (8x8) | 104.2W (Tc) | N-Channel | - | 650V | 10.9A (Tc) | 340 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,977
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
1,198
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
2,621
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,133
In-stock
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ON Semiconductor | MOSFET N-CH 800V 4A TO220F | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Formed Leads | TO-220F-3 (Y-Forming) | 24W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,124
In-stock
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ON Semiconductor | MOSFET N-CH 800V 4A TO220F | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 24W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
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VIEW |
1,751
In-stock
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ON Semiconductor | MOSFET N-CH 800V 4A TO252 | SuperFET® II | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 52W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
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VIEW |
720
In-stock
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ON Semiconductor | MOSFET N-CH 800V 4A TO252 | SuperFET® II | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 52W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
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VIEW |
1,222
In-stock
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ON Semiconductor | MOSFET N-CH 800V 4A TO252 | SuperFET® II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 52W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
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VIEW |
3,842
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 8A (Ta) | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
3,430
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 600V | 8A (Ta) | 560 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
3,254
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 600V | 8A (Ta) | 560 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
3,299
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 600V | 8A (Ta) | 560 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
