Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC046N02KSGAUMA1
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Infineon Technologies MOSFET N-CH 20V 80A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.8W (Ta), 48W (Tc) N-Channel - 20V 19A (Ta), 80A (Tc) 4.6 mOhm @ 50A, 4.5V 1.2V @ 110µA 27.6nC @ 4.5V 4100pF @ 10V 2.5V, 4.5V ±12V
BSC046N02KSGAUMA1
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Infineon Technologies MOSFET N-CH 20V 80A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.8W (Ta), 48W (Tc) N-Channel - 20V 19A (Ta), 80A (Tc) 4.6 mOhm @ 50A, 4.5V 1.2V @ 110µA 27.6nC @ 4.5V 4100pF @ 10V 2.5V, 4.5V ±12V
BSC046N02KSGAUMA1
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Infineon Technologies MOSFET N-CH 20V 80A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.8W (Ta), 48W (Tc) N-Channel - 20V 19A (Ta), 80A (Tc) 4.6 mOhm @ 50A, 4.5V 1.2V @ 110µA 27.6nC @ 4.5V 4100pF @ 10V 2.5V, 4.5V ±12V