- Manufacture :
- Series :
- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,530
In-stock
|
EPC | TRANS GAN 100V 0.5A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
2,999
In-stock
|
EPC | TRANS GAN 100V 0.5A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
3,026
In-stock
|
EPC | TRANS GAN 100V 0.5A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
1,005
In-stock
|
ON Semiconductor | FET 80V 3.7 MOHM MLP33 | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 2.4W (Ta) | N-Channel | - | 80V | 6A (Tc) | 36.5 mOhm @ 4A, 10V | 2.5V @ 20µA | 9nC @ 10V | 595pF @ 40V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,143
In-stock
|
EPC | TRANS GAN 100V 2.8OHM BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
2,750
In-stock
|
EPC | TRANS GAN 100V 2.8OHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
1,462
In-stock
|
EPC | TRANS GAN 100V 2.8OHM BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
