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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,145
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 4.3A 1212-8 PPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 1.3W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 48 mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
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VIEW |
926
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 4.3A 1212-8 PPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 1.3W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 48 mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
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VIEW |
3,650
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 4.3A 1212-8 PPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 1.3W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 48 mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
1,997
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 4.3A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 1.3W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 4.3A (Ta) | 48 mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
