Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPCC8008(TE12L,QM)
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3,479
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 25A 8TSON U-MOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 4.5V, 10V ±25V
TPCC8008(TE12L,QM)
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2,443
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 25A 8TSON U-MOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 4.5V, 10V ±25V
TPCC8008(TE12L,QM)
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1,148
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 25A 8TSON U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 4.5V, 10V ±25V