Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount D-3 Module D3 175W (Tc) N-Channel 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - -
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 175W (Tc) N-Channel 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V 20V +25V, -10V