Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP2M011A090NG
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Global Power Technologies Group MOSFET N-CH 900V 11A TO3PN - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 416W (Tc) N-Channel 900V 11A (Tc) 900 mOhm @ 5.5A, 10V 5V @ 250µA 84nC @ 10V 3240pF @ 25V 10V ±30V