Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TPC8125,LQ(S
RFQ
VIEW
RFQ
1,338
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 30V 10A 8SOP U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1W (Ta) P-Channel 30V 10A (Ta) 13 mOhm @ 5A, 10V 2V @ 500µA 64nC @ 10V 2580pF @ 10V 4.5V, 10V +20V, -25V
PSMN013-30LL,115
RFQ
VIEW
RFQ
831
In-stock
NXP USA Inc. MOSFET N-CH 30V QFN3333 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 41W (Tc) N-Channel 30V 21A (Tc) 13 mOhm @ 5A, 10V 2.15V @ 1mA 12.2nC @ 10V 768pF @ 15V 4.5V, 10V ±20V
PSMN013-30LL,115
RFQ
VIEW
RFQ
1,103
In-stock
NXP USA Inc. MOSFET N-CH 30V QFN3333 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 41W (Tc) N-Channel 30V 21A (Tc) 13 mOhm @ 5A, 10V 2.15V @ 1mA 12.2nC @ 10V 768pF @ 15V 4.5V, 10V ±20V
PSMN013-30LL,115
RFQ
VIEW
RFQ
1,216
In-stock
NXP USA Inc. MOSFET N-CH 30V QFN3333 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 41W (Tc) N-Channel 30V 21A (Tc) 13 mOhm @ 5A, 10V 2.15V @ 1mA 12.2nC @ 10V 768pF @ 15V 4.5V, 10V ±20V