Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC8036-H(TE12L,QM
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A 8-SOIC U-MOSVI-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 30V 18A (Ta) 4.5 mOhm @ 9A, 10V 2.3V @ 1mA 49nC @ 10V 4600pF @ 10V 4.5V, 10V ±20V