Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUZ31H3046XKSA1
RFQ
VIEW
RFQ
1,555
In-stock
Infineon Technologies MOSFET N-CH 200V 14.5A TO262-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 95W (Tc) N-Channel 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 5V ±20V
BUZ31HXKSA1
RFQ
VIEW
RFQ
1,019
In-stock
Infineon Technologies MOSFET N-CH 200V 14.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 95W (Tc) N-Channel 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 5V ±20V
BUZ31 E3046
RFQ
VIEW
RFQ
1,882
In-stock
Infineon Technologies MOSFET N-CH 200V 14.5A TO262-3 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 95W (Tc) N-Channel 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 5V ±20V
BUZ31 E3045A
RFQ
VIEW
RFQ
2,067
In-stock
Infineon Technologies MOSFET N-CH 200V 14.5A TO263 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 95W (Tc) N-Channel 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 10V ±20V
BUZ31
RFQ
VIEW
RFQ
2,044
In-stock
Infineon Technologies MOSFET N-CH 200V 14.5A TO220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 95W (Tc) N-Channel 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 5V ±20V