Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQB2NA90TM
RFQ
VIEW
RFQ
894
In-stock
ON Semiconductor MOSFET N-CH 900V 2.8A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 107W (Tc) N-Channel - 900V 2.8A (Tc) 5.8 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 680pF @ 25V 10V ±30V
FQP2NA90
RFQ
VIEW
RFQ
2,299
In-stock
ON Semiconductor MOSFET N-CH 900V 2.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 107W (Tc) N-Channel - 900V 2.8A (Tc) 5.8 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 680pF @ 25V 10V ±30V
FQI2NA90TU
RFQ
VIEW
RFQ
3,427
In-stock
ON Semiconductor MOSFET N-CH 900V 2.8A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 107W (Tc) N-Channel - 900V 2.8A (Tc) 5.8 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 680pF @ 25V 10V ±30V