Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 13A TO-220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 102W (Tc) N-Channel 250V 13A (Ta) 250 mOhm @ 6.5A, 10V 3.5V @ 1mA 25nC @ 10V 1100pF @ 100V 10V ±20V