Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On, Min Rds On)
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A TO-220AB U-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 60W (Tc) N-Channel 60V 25A (Ta) 18 mOhm @ 12.5A, 10V 29nC @ 10V -