Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APTM120DA30CT1G
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Microsemi Corporation MOSFET N-CH 1200V 31A SP1 POWER MOS 8™ Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 657W (Tc) N-Channel 1200V 31A (Tc) 360 mOhm @ 25A, 10V 5V @ 2.5mA 560nC @ 10V 14560pF @ 25V 10V ±30V
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Microsemi Corporation MOSFET N-CH 1200V 31A SP1 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 657W (Tc) N-Channel 1200V 31A (Tc) 360 mOhm @ 25A, 10V 5V @ 2.5mA 560nC @ 10V 14560pF @ 25V 10V ±30V