Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFR26N120P
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IXYS MOSFET N-CH 1200V 15A ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 320W (Tc) N-Channel - 1200V 15A (Tc) 500 mOhm @ 13A, 10V 6.5V @ 1mA 225nC @ 10V 14000pF @ 25V 10V ±30V
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