Package / Case :
Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 125W (Tc) N-Channel 600V 25A (Tc) 90 mOhm @ 11.4A, 10V 4.5V @ 570µA 51nC @ 10V 2103pF @ 400V 10V ±20V
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Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 125W (Tc) N-Channel 600V 25A (Tc) 90 mOhm @ 11.4A, 10V 4.5V @ 570µA 51nC @ 10V 2103pF @ 400V 10V ±20V