- Packaging :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,359
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | π-MOSVI | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 1.25W (Ta) | N-Channel | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | 152pF @ 10V | 2.5V, 4V | ±10V | |||
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VIEW |
608
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 1.25W (Ta) | N-Channel | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | 152pF @ 10V | 2.5V, 4V | ±10V | |||
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VIEW |
2,262
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | π-MOSVI | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 1.25W (Ta) | N-Channel | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | 152pF @ 10V | 2.5V, 4V | ±10V | |||
