Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH60N10
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3,043
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IXYS MOSFET N-CH 100V 60A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel 100V 60A (Tc) 20 mOhm @ 30A, 10V 4V @ 250µA 110nC @ 10V 3200pF @ 25V 10V ±20V
IXTT60N10
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RFQ
2,112
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IXYS MOSFET N-CH 100V 60A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel 100V 60A (Tc) 20 mOhm @ 30A, 10V 4V @ 250µA 110nC @ 10V 3200pF @ 25V 10V ±20V