Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP1N100P
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2,863
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IXYS MOSFET N-CH 1000V 1A TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel - 1000V 1A (Tc) 15 Ohm @ 500mA, 10V 4.5V @ 50µA 15.5nC @ 10V 331pF @ 25V 10V ±20V
IXTA1N100P
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RFQ
1,100
In-stock
IXYS MOSFET N-CH 1000V 1A TO-263 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 50W (Tc) N-Channel - 1000V 1A (Tc) 15 Ohm @ 500mA, 10V 4.5V @ 50µA 15.5nC @ 10V 331pF @ 25V 10V ±20V
TP2435N8-G
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RFQ
2,662
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Microchip Technology MOSFET P-CH 350V 0.231A SOT89-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA TO-243AA (SOT-89) 1.6W (Ta) P-Channel - 350V 231mA (Tj) 15 Ohm @ 500mA, 10V 2.4V @ 1mA - 200pF @ 25V 3V, 10V ±20V
IXTY1N100P
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RFQ
2,411
In-stock
IXYS MOSFET N-CH 1000V 1A TO-252 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 50W (Tc) N-Channel - 1000V 1A (Tc) 15 Ohm @ 500mA, 10V 4.5V @ 50µA 15.5nC @ 10V 331pF @ 25V 10V ±20V