Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK46E08N1,S1X
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 80A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 103W (Tc) N-Channel - 80V 80A (Tc) 8.4 mOhm @ 23A, 10V 4V @ 500µA 37nC @ 10V 2500pF @ 40V 10V ±20V
TK46A08N1,S4X
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2,606
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 46A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 80V 46A (Tc) 8.4 mOhm @ 23A, 10V 4V @ 500µA 37nC @ 10V 2500pF @ 40V 10V ±20V