Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPCC8002-H(TE12L,Q
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1,044
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12L,Q
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1,698
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12L,Q
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RFQ
3,626
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12LQM
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RFQ
2,101
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12LQM
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RFQ
1,607
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12LQM
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RFQ
3,507
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8001-H(TE12LQM
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RFQ
980
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8001-H(TE12LQM
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RFQ
3,628
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8001-H(TE12LQM
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RFQ
1,047
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V