Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFD224
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1,709
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Vishay Siliconix MOSFET N-CH 250V 630MA 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 250V 630mA (Ta) 1.1 Ohm @ 380mA, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFD224PBF
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3,078
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Vishay Siliconix MOSFET N-CH 250V 630MA 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 250V 630mA (Ta) 1.1 Ohm @ 380mA, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V