Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL7486MTRPBF
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Infineon Technologies MOSFET N-CH 40V 209A HEXFET®, StrongIRFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ME 104W (Tc) N-Channel - 40V 209A (Tc) 1.25 mOhm @ 123A, 10V 2.5V @ 150µA 111nC @ 4.5V 6904pF @ 25V 4.5V, 10V ±20V
IRL7486MTRPBF
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1,929
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Infineon Technologies MOSFET N-CH 40V 209A HEXFET®, StrongIRFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ME 104W (Tc) N-Channel - 40V 209A (Tc) 1.25 mOhm @ 123A, 10V 2.5V @ 150µA 111nC @ 4.5V 6904pF @ 25V 4.5V, 10V ±20V
IRL7486MTRPBF
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2,698
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Infineon Technologies MOSFET N-CH 40V 209A HEXFET®, StrongIRFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ME 104W (Tc) N-Channel - 40V 209A (Tc) 1.25 mOhm @ 123A, 10V 2.5V @ 150µA 111nC @ 4.5V 6904pF @ 25V 4.5V, 10V ±20V