Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTD4963NT4G
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2,944
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ON Semiconductor MOSFET N-CH 30V 8.1A DPAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.1W (Ta), 35.7W (Tc) N-Channel - 30V 8.1A (Ta), 44A (Tc) 9.6 mOhm @ 30A, 10V 2.5V @ 250µA 16.2nC @ 10V 1035pF @ 12V 4.5V, 10V ±20V
NTD4963NT4G
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RFQ
3,197
In-stock
ON Semiconductor MOSFET N-CH 30V 8.1A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.1W (Ta), 35.7W (Tc) N-Channel - 30V 8.1A (Ta), 44A (Tc) 9.6 mOhm @ 30A, 10V 2.5V @ 250µA 16.2nC @ 10V 1035pF @ 12V 4.5V, 10V ±20V
NTD4963NT4G
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RFQ
3,555
In-stock
ON Semiconductor MOSFET N-CH 30V 8.1A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.1W (Ta), 35.7W (Tc) N-Channel - 30V 8.1A (Ta), 44A (Tc) 9.6 mOhm @ 30A, 10V 2.5V @ 250µA 16.2nC @ 10V 1035pF @ 12V 4.5V, 10V ±20V
NTD4963N-35G
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RFQ
2,787
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ON Semiconductor MOSFET N-CH 30V 8.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.1W (Ta), 35.7W (Tc) N-Channel - 30V 8.1A (Ta), 44A (Tc) 9.6 mOhm @ 30A, 10V 2.5V @ 250µA 16.2nC @ 10V 1035pF @ 12V 4.5V, 10V ±20V
IPB096N03LGATMA1
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RFQ
1,545
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Infineon Technologies MOSFET N-CH 30V 35A TO-263-3 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 42W (Tc) N-Channel - 30V 35A (Tc) 9.6 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V
IPB096N03LGATMA1
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RFQ
1,113
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Infineon Technologies MOSFET N-CH 30V 35A TO-263-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 42W (Tc) N-Channel - 30V 35A (Tc) 9.6 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V
IPB096N03LGATMA1
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RFQ
3,724
In-stock
Infineon Technologies MOSFET N-CH 30V 35A TO-263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 42W (Tc) N-Channel - 30V 35A (Tc) 9.6 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V
IPP096N03L G
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RFQ
3,028
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Infineon Technologies MOSFET N-CH 30V 35A TO-220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 42W (Tc) N-Channel - 30V 35A (Tc) 9.6 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V