Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPT111N20NFDATMA1
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Infineon Technologies MOSFET N-CH 200V 96A HSOF-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8 375W (Tc) N-Channel - 200V 96A (Tc) 11.1 mOhm @ 96A, 10V 4V @ 267µA 87nC @ 10V 7000pF @ 100V 10V ±20V
IPT111N20NFDATMA1
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1,815
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Infineon Technologies MOSFET N-CH 200V 96A HSOF-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8 375W (Tc) N-Channel - 200V 96A (Tc) 11.1 mOhm @ 96A, 10V 4V @ 267µA 87nC @ 10V 7000pF @ 100V 10V ±20V
IPT111N20NFDATMA1
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3,021
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Infineon Technologies MOSFET N-CH 200V 96A HSOF-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8 375W (Tc) N-Channel - 200V 96A (Tc) 11.1 mOhm @ 96A, 10V 4V @ 267µA 87nC @ 10V 7000pF @ 100V 10V ±20V