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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVII | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 1.9W (Ta), 30W (Tc) | N-Channel | 20V | 21A (Ta) | 5.8 mOhm @ 10.5A, 4.5V | 1.2V @ 500µA | 16nC @ 5V | 1860pF @ 10V | 2.5V, 4.5V | ±12V | |||
