Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Nexperia USA Inc. MOSFET N-CH 80V 2.8A 6DFN2020MD Automotive, AEC-Q101 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 6-DFN2020MD (2x2) 1.6W (Ta) N-Channel - 80V 2.8A (Ta) 230 mOhm @ 1.9A, 10V 2.7V @ 250µA 7.2nC @ 10V 215pF @ 40V 4.5V, 10V ±20V
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Nexperia USA Inc. MOSFET N-CH 80V 1.9A SOT1220 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 6-DFN2020MD (2x2) 1.6W (Ta), 15.6W (Tc) N-Channel - 80V 1.9A (Ta) 230 mOhm @ 1.9A, 10V 2.7V @ 250µA 7.2nC @ 10V 215pF @ 40V 4.5V, 10V ±20V