- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
968
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 6A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 [K] | 225W (Tc) | N-Channel | - | 1000V | 6A (Tc) | 2.5 Ohm @ 3A, 10V | 5V @ 1mA | 43nC @ 10V | 1410pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,179
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 8A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 335W (Tc) | N-Channel | - | 1200V | 8A (Tc) | 2.5 Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | 2565pF @ 25V | 10V | ±30V | |||
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VIEW |
1,767
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 900V | 5A (Ta) | 2.5 Ohm @ 3A, 10V | 4V @ 1mA | 28nC @ 10V | 1150pF @ 25V | 10V | ±30V | |||
