Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 50A TO-3P(L) - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3PL TO-3P(L) 250W (Tc) N-Channel 500V 50A (Ta) 95 mOhm @ 25A, 10V 3.4V @ 1mA 280nC @ 10V 11000pF @ 10V 10V ±30V