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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK3564(STA4,Q,M)	RFQ VIEW	PDF RFQ	967 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-220SIS		π-MOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	900V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	4V @ 1mA	17nC @ 10V	700pF @ 25V	10V	±30V
	RJK6032DPD-00#J2	RFQ VIEW	PDF RFQ	1,390 In-stock	Renesas Electronics America	MOSFET N-CH 600V 3A MP3A		-	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	MP-3A	40.3W (Tc)	N-Channel	600V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	-	9nC @ 10V	285pF @ 25V	10V	±30V
	RJK6032DPH-E0#T2	RFQ VIEW	PDF RFQ	1,760 In-stock	Renesas Electronics America	MOSFET N-CH 600V 3A TO251		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251	40.3W (Tc)	N-Channel	600V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	-	9nC @ 10V	285pF @ 25V	10V	±30V
	2SK2719(F)	RFQ VIEW	PDF RFQ	3,478 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-3PN		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	125W (Tc)	N-Channel	900V	3A (Ta)	4.3 Ohm @ 1.5A, 10V	4V @ 1mA	25nC @ 10V	750pF @ 25V	10V	±30V

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