Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPS70R600CEAKMA1
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Infineon Technologies MOSFET N-CH 700V 10.5A TO-251 CoolMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 86W (Tc) N-Channel Super Junction 700V 10.5A (Tc) 600 mOhm @ 1A, 10V 3.5V @ 0.21mA 22nC @ 10V 474pF @ 100V 10V ±20V
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Infineon Technologies MOSFET N-CH 700V 10.5A TO220-3 CoolMOS™ CE Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 86W (Tc) N-Channel - 700V 10.5A (Tc) 600 mOhm @ 1A, 10V 3.5V @ 210µA 22nC @ 10V 474pF @ 100V 10V ±20V
IPD70R600CEAUMA1
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Infineon Technologies MOSFET N-CH TO252-3 CoolMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 86W (Tc) N-Channel Super Junction 700V 10.5A (Tc) 600 mOhm @ 1A, 10V 3.5V @ 0.21mA 22nC @ 10V 474pF @ 100V 10V ±20V
IPSA70R600CEAKMA1
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1,592
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Infineon Technologies MOSFET N-CH 700V 10.5A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 86W (Tc) N-Channel - 700V 10.5A (Tc) 600 mOhm @ 1A, 10V 3.5V @ 210µA 22nC @ 10V 474pF @ 100V 10V ±20V