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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,601
In-stock
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Vishay Siliconix | MOSFET N-CHAN 800V FP TO-220 | E | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 69W (Tc) | N-Channel | - | 800V | 4.3A (Tc) | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | 622pF @ 100V | 10V | ±30V | |||
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VIEW |
2,564
In-stock
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Vishay Siliconix | MOSFET N-CHAN 800V TO-220AB | E | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 69W (Tc) | N-Channel | - | 800V | 4.3A (Tc) | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | 622pF @ 100V | 10V | ±30V | |||
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VIEW |
3,563
In-stock
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Vishay Siliconix | MOSFET N-CHAN 800V TO-251 | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 69W (Tc) | N-Channel | - | 800V | 4.3A (Tc) | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | 622pF @ 100V | 10V | ±30V | |||
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VIEW |
1,267
In-stock
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Vishay Siliconix | MOSFET N-CHAN 800V FP TO-252 | E | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 69W (Tc) | N-Channel | - | 800V | 4.3A (Tc) | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | 622pF @ 100V | 10V | ±30V | |||
