Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP373NH6327XTSA1
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Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
BSP373NH6327XTSA1
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3,335
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Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
BSP373NH6327XTSA1
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2,364
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Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V