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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFH67N10Q	RFQ VIEW	PDF RFQ	3,947 In-stock	IXYS	MOSFET N-CH 100V 67A TO247AD		HiPerFET™	Last Time Buy	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	300W (Tc)	N-Channel	-	100V	67A (Tc)	25 mOhm @ 33.5A, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	10V	±20V
	IXFH67N10	RFQ VIEW	PDF RFQ	1,900 In-stock	IXYS	MOSFET N-CH 100V 67A TO-247AD		HiPerFET™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	300W (Tc)	N-Channel	-	100V	67A (Tc)	25 mOhm @ 33.5A, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	10V	±20V
	IXTM67N10	RFQ VIEW	PDF RFQ	2,336 In-stock	IXYS	POWER MOSFET TO-3		GigaMOS™	Last Time Buy	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE	300W (Tc)	N-Channel	-	100V	67A (Tc)	25 mOhm @ 33.5A, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	10V	±20V
	IXFM67N10	RFQ VIEW	PDF RFQ	630 In-stock	IXYS	POWER MOSFET TO-3		HiPerFET™	Last Time Buy	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE	300W (Tc)	N-Channel	-	100V	67A (Tc)	25 mOhm @ 33.5A, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	10V	±20V
	IXTH67N10	RFQ VIEW	PDF RFQ	3,521 In-stock	IXYS	MOSFET N-CH 100V 67A TO247AD		MegaMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	-	100V	67A (Tc)	25 mOhm @ 33.5A, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	10V	±20V

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