Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI7190DP-T1-GE3
RFQ
VIEW
RFQ
2,943
In-stock
Vishay Siliconix MOSFET N-CH 250V 18.4A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 96W (Tc) N-Channel - 250V 18.4A (Tc) 118 mOhm @ 4.4A, 10V 4V @ 250µA 72nC @ 10V 2214pF @ 125V 6V, 10V ±20V
SI7190DP-T1-GE3
RFQ
VIEW
RFQ
2,983
In-stock
Vishay Siliconix MOSFET N-CH 250V 18.4A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 96W (Tc) N-Channel - 250V 18.4A (Tc) 118 mOhm @ 4.4A, 10V 4V @ 250µA 72nC @ 10V 2214pF @ 125V 6V, 10V ±20V
SI7190DP-T1-GE3
RFQ
VIEW
RFQ
1,261
In-stock
Vishay Siliconix MOSFET N-CH 250V 18.4A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 96W (Tc) N-Channel - 250V 18.4A (Tc) 118 mOhm @ 4.4A, 10V 4V @ 250µA 72nC @ 10V 2214pF @ 125V 6V, 10V ±20V