- Series :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,848
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CHANNEL 60V 28A 8DFN | AlphaSGT™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN-EP (3x3) | 27.5W (Tc) | N-Channel | - | 60V | 28A (Tc) | 9.5 mOhm @ 17A, 10V | 2.4V @ 250µA | 25nC @ 10V | 1100pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
746
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 34A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 34A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,123
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 75A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 103W (Tc) | N-Channel | - | 100V | 75A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
