Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2369DS-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 7.6A TO-236 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1.25W (Ta), 2.5W (Tc) P-Channel - 30V 7.6A (Tc) 29 mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V 1295pF @ 15V 4.5V, 10V ±20V
SI2369DS-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 7.6A TO-236 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1.25W (Ta), 2.5W (Tc) P-Channel - 30V 7.6A (Tc) 29 mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V 1295pF @ 15V 4.5V, 10V ±20V
SI2369DS-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 7.6A TO-236 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1.25W (Ta), 2.5W (Tc) P-Channel - 30V 7.6A (Tc) 29 mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V 1295pF @ 15V 4.5V, 10V ±20V