Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM80N1R2CI C0G
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Taiwan Semiconductor Corporation MOSFET N-CH 800V 5.5A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 25W (Tc) N-Channel 800V 5.5A (Tc) 1.2 Ohm @ 1.8A, 10V 4V @ 250µA 19.4nC @ 10V 685pF @ 100V 10V ±30V
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Taiwan Semiconductor Corporation MOSFET N-CH 800V 5.5A TO262S - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Short Leads, I²Pak TO-262S (I2PAK) 110W (Tc) N-Channel 800V 5.5A (Tc) 1.2 Ohm @ 1.8A, 10V 4V @ 250µA 19.4nC @ 10V 685pF @ 100V 10V ±30V