Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPP70N04S307AKSA1
RFQ
VIEW
RFQ
977
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 79W (Tc) N-Channel - 40V 80A (Tc) 6.5 mOhm @ 70A, 10V 4V @ 50µA 40nC @ 10V 2700pF @ 25V 10V ±20V
IPI70N04S307AKSA1
RFQ
VIEW
RFQ
3,952
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 79W (Tc) N-Channel - 40V 80A (Tc) 6.5 mOhm @ 70A, 10V 4V @ 50µA 40nC @ 10V 2700pF @ 25V 10V ±20V
IPP70N04S406AKSA1
RFQ
VIEW
RFQ
1,355
In-stock
Infineon Technologies MOSFET N-CH 40V 70A TO220-3-1 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 58W (Tc) N-Channel - 40V 70A (Tc) 6.5 mOhm @ 70A, 10V 4V @ 26µA 32nC @ 10V 2550pF @ 25V 10V ±20V
IPI70N04S406AKSA1
RFQ
VIEW
RFQ
3,956
In-stock
Infineon Technologies MOSFET N-CH 40V 70A TO262-3-1 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 58W (Tc) N-Channel - 40V 70A (Tc) 6.5 mOhm @ 70A, 10V 4V @ 26µA 32nC @ 10V 2550pF @ 25V 10V ±20V