Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH1R204PL,L1Q
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1,680
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 132W (Tc) N-Channel - 40V 150A (Tc) 1.24 mOhm @ 50A, 10V 2.4V @ 500µA 74nC @ 10V 7200pF @ 20V 4.5V, 10V ±20V
TPH1R204PL,L1Q
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RFQ
1,540
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 132W (Tc) N-Channel - 40V 150A (Tc) 1.24 mOhm @ 50A, 10V 2.4V @ 500µA 74nC @ 10V 7200pF @ 20V 4.5V, 10V ±20V
TPH1R204PL,L1Q
RFQ
VIEW
RFQ
853
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 132W (Tc) N-Channel - 40V 150A (Tc) 1.24 mOhm @ 50A, 10V 2.4V @ 500µA 74nC @ 10V 7200pF @ 20V 4.5V, 10V ±20V