- Packaging :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,156
In-stock
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Infineon Technologies | MOSFET N-CH 25V DIRECTFET S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.8W (Ta), 26W (Tc) | N-Channel | - | 25V | 17A (Ta), 63A (Tc) | 3.8 mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | 1810pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
3,515
In-stock
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Infineon Technologies | MOSFET N-CH 25V 17A DIRECTFET-S1 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.8W (Ta), 26W (Tc) | N-Channel | - | 25V | 17A (Ta), 63A (Tc) | 3.8 mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | 1810pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
1,066
In-stock
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Infineon Technologies | MOSFET N-CH 25V 17A DIRECTFET-S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.8W (Ta), 26W (Tc) | N-Channel | - | 25V | 17A (Ta), 63A (Tc) | 3.8 mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | 1810pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
3,806
In-stock
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Infineon Technologies | MOSFET N-CH 25V 17A DIRECTFET-S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 1.8W (Ta), 26W (Tc) | N-Channel | - | 25V | 17A (Ta), 63A (Tc) | 3.8 mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | 1810pF @ 13V | 4.5V, 10V | ±20V | |||
