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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,413
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.1A SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 4.1A (Ta) | 46 mOhm @ 4.1A, 4.5V | 1.1V @ 5µA | 3.5nC @ 4.5V | 290pF @ 16V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,155
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.1A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 4.1A (Ta) | 46 mOhm @ 4.1A, 4.5V | 1.1V @ 5µA | 3.5nC @ 4.5V | 290pF @ 16V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,388
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.1A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 4.1A (Ta) | 46 mOhm @ 4.1A, 4.5V | 1.1V @ 5µA | 3.5nC @ 4.5V | 290pF @ 16V | 2.5V, 4.5V | ±12V | |||
