Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFK32N80P
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VIEW
RFQ
2,120
In-stock
IXYS MOSFET N-CH 800V 32A TO-264 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 830W (Tc) N-Channel - 800V 32A (Tc) 270 mOhm @ 16A, 10V 5V @ 8mA 150nC @ 10V 8800pF @ 25V 10V ±30V
IXFX32N80P
RFQ
VIEW
RFQ
1,104
In-stock
IXYS MOSFET N-CH 800V 32A PLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 800V 32A (Tc) 270 mOhm @ 16A, 10V 5V @ 8mA 150nC @ 10V 8800pF @ 25V 10V ±30V
IXFX32N80Q3
RFQ
VIEW
RFQ
1,035
In-stock
IXYS MOSFET N-CH 800V 32A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1000W (Tc) N-Channel - 800V 32A (Tc) 270 mOhm @ 16A, 10V 6.5V @ 4mA 140nC @ 10V 6940pF @ 25V 10V ±30V
IXFK32N80Q3
RFQ
VIEW
RFQ
693
In-stock
IXYS MOSFET N-CH 800V 32A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1000W (Tc) N-Channel - 800V 32A (Tc) 270 mOhm @ 16A, 10V 6.5V @ 4mA 140nC @ 10V 6940pF @ 25V 10V ±30V
IXFN32N80P
RFQ
VIEW
RFQ
3,566
In-stock
IXYS MOSFET N-CH 800V 29A SOT-227B PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 625W (Tc) N-Channel - 800V 29A (Tc) 270 mOhm @ 16A, 10V 5V @ 8mA 150nC @ 10V 8820pF @ 25V 10V ±30V