Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPW32N50C3FKSA1
RFQ
VIEW
RFQ
2,590
In-stock
Infineon Technologies MOSFET N-CH 560V 32A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 284W (Tc) N-Channel - 560V 32A (Tc) 110 mOhm @ 20A, 10V 3.9V @ 1.8mA 170nC @ 10V 4200pF @ 25V 10V ±20V
FQL40N50F
RFQ
VIEW
RFQ
2,946
In-stock
ON Semiconductor MOSFET N-CH 500V 40A TO-264 FRFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 460W (Tc) N-Channel - 500V 40A (Tc) 110 mOhm @ 20A, 10V 5V @ 250µA 200nC @ 10V 7500pF @ 25V 10V ±30V
FQL40N50
RFQ
VIEW
RFQ
2,769
In-stock
ON Semiconductor MOSFET N-CH 500V 40A TO-264 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 460W (Tc) N-Channel - 500V 40A (Tc) 110 mOhm @ 20A, 10V 5V @ 250µA 200nC @ 10V 7500pF @ 25V 10V ±30V