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- Part Status :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
861
In-stock
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STMicroelectronics | MOSFET N-CH 500V 18.4A TO-247 | PowerMESH™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 220W (Tc) | N-Channel | - | 500V | 18.4A (Tc) | 270 mOhm @ 9A, 10V | 4V @ 250µA | 128nC @ 10V | 2980pF @ 25V | 10V | ±30V | ||||
VIEW |
3,654
In-stock
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Rohm Semiconductor | MOSFET N-CH 10V DRIVE LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 100W (Tc) | N-Channel | - | 600V | 18A (Ta) | 270 mOhm @ 9A, 10V | 4.5V @ 1mA | 55nC @ 10V | 2050pF @ 25V | 10V | ±30V | ||||
VIEW |
2,310
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 500V | 18A (Ta) | 270 mOhm @ 9A, 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | 10V | ±30V |